Tutorial Title:   Advances in SiC Power Conversion Technologies for High-Frequency and High-Power Resonant DC-DC Converter Applications

High-frequency and high-power resonant DC-DC converters have been widely used in industrial application such as datacenter, electric vehicle, electrostatic precipitation, medical instruments, DC grid, etc. This tutorial focuses the recent advances of SiC power conversion technologies for high-frequency and high-power resonant DC-DC converters applications. The tutorial starts with the introduction of high-frequency and high-power resonant DC-DC converters including the basics, development history, the state-of-the-art technologies and industrial application trends. Secondly, the electromagnetic modeling and the current uniformity optimization of the multi-chip SiC MOSFET power module are provided in detailed. Then the analysis and suppression methodologies for the crosstalk between paralleled SiC MOSFETs are introduced. The steady-state modeling with phase shift and frequency modulation based on simplified state trajectory, and high accurate binary polynomial model are given. The generic steady-state circuit modeling methodologies for the modular SiC LCC resonant converter with multiple transformers and voltage multipliers are provided. Finally, the technology demonstrator of 50kW 300~500kHz Resonant DC-DC Converter with SiC MOSFET power devices is presented.

Presenters’  Information

Saijun Mao, UniSiC Technology (Shanghai) Co., Ltd., China

Saijun Mao received the B.S. and M.S. degrees from Nanjing University of Aeronautics and Astronautics, Nanjing, China, the Ph.D. degree from Delft University of Technology, Delft, the Netherlands, all in electrical engineering. From 2006 to 2017, he was a senior engineer and project leader with the GE Global Research Center, Shanghai, China. He was also with the Electrical Power Processing group in the department of Electrical Sustainable Energy at the Delft University of Technology, Delft, the Netherlands as a Ph.D. Researcher since December 2014. He was a Professor in Fudan University, China. Now Dr. Mao is with UniSiC Technology (Shanghai) Co., Ltd., China. His research interests include wide-bandgap power semiconductor devices-based power conversion systems, high frequency high voltage generator systems. He has published more than 60 conference and journal papers. He holds over 60 issued patents and pending patent applications. He received one IEEE Best Paper award. He received more than 15 awards in GE Global Research Center.